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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA980/981/982
DESCRIPTION *With TO-3 package *Complement to type 2SC2260/2261/2262 APPLICATIONS *For power switching and general purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER 2SA980 VCBO Collector-base voltage 2SA981 2SA982 2SA980 VCEO Collector-emitter voltage 2SA981 2SA982 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -6 -8 -3 80 150 -65~150 V A A W V V UNIT
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2SA980 V(BR)CEO Collector-emitter breakdown voltage 2SA981 2SA982 VCEsat Collector-emitter saturation voltage 2SA980 ICBO Collector cut-off current 2SA981 2SA982 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency IC=-3A; IB=-0.3A VCB=-100V; IE=0 VCB=-120V; IE=0 VCB=-140V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-12V IC=-50mA ;IB=0 CONDITIONS
2SA980/981/982
MIN -100 -120 -140
TYP.
MAX
UNIT
V
-1.5
V
-0.1
mA
-0.1 30 20
mA
MHz
Switching times tr ts tf Rise time Storage time Fall time IC=-3A;RL=4 IB1=-0.2A; IB2=0.1A VCC=-12V 0.85 2.0 0.3 s s s
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA980/981/982
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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